2SC1008 Y(120-240)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES z General Purpose Switching and Amplification 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Collector Power Dissipation 800 mW Thermal Resistance From Junction To Ambient 156 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 8 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA VCE=2V, IC=50mA hFE DC current gain 40 400 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Base-emitter saturation voltage VBE (sat) IC=500mA,IB=50mA 1.1 V Collector output capacitance Cob fT Transition frequency 8 VCB=10V,IC=0, f=1MHz VCE=10V,IC= 50mA pF 30 MHz CLASSIFICATION OF hFE RANK R O Y G RANGE 40-80 70-140 120-240 200-400 A,Dec,2010